Limitations in Time Resolved Photoluminescence of Gallium Nitride Using a Streak Camera : 9781249829256 : 17 Oct 2012 : Semiconductor performance is often characterized in terms of the rate at which its carrier recombination processes occur. Carrier recombination, including radiative, and Schockley-Read-Hall and Auger (both nonradiative), occurs at ultra-fast times in the picosecond or femtosecond regimes. A device which can measure both spectral data and temporal phenomena at this speed is the streak camera. The capability to do time-resolved spectroscopy of wide band gap semiconductors using a streak camera has been established at AFIT for the first time. Time resolved photoluminescence (TRPL) from samples of gallium nitride were measured at temperatures of 5 K over spectral bands of 36.6 A and temporal ranged of 45 to 1970 ps, both instrument-limited. TRPL features at 3552 A and 3587 A were studied giving decay lifetimes at 43.2 plus or minus 1.6 ps and 16.8 plus or minus 3.4 ps, re