Charge?Based MOS Transistor Modeling ? The EKV Model for Low?Power and RF IC Design

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Electronics & communications e

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Wordery

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Wiley?blackwell

Charge?Based MOS Transistor Modeling ? The EKV Model for Low?Power and RF IC Design : Wiley?Blackwell : 9780470855416 : 047085541X : 14 Jul 2006 : Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely descr

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